SI4569DY datasheet(3/12 Pages) VISHAY

부품명	SI4569DY

상세설명	N- and P-Channel 40-V (D-S) MOSFET

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제조업체	VISHAY [Vishay Siliconix]

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Document Number: 73586

S09-0393-Rev. B, 09-Mar-09

www.vishay.com

3

Vishay Siliconix

Si4569DY

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Dynamica

Turn-On Delay Time

td(on)

N-Channel

VDD = 20 V, RL = 4 Ω

ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω

P-Channel

VDD = - 20 V, RL = 4 Ω

ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω

N-Ch

6

12

ns

P-Ch

7

14

Rise Time

tr

N-Ch

11

20

P-Ch

15

25

Turn-Off Delay Time

td(off)

N-Ch

24

36

P-Ch

51

77

Fall Time

tf

N-Ch

6

12

P-Ch

54

81

Turn-On Delay Time

td(on)

N-Channel

VDD = 20 V, RL = 4 Ω

ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω

P-Channel

VDD = - 20 V, RL = 4 Ω

ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω

N-Ch

12

20

P-Ch

26

40

Rise Time

tr

N-Ch

60

90

P-Ch

105

160

Turn-Off Delay Time

td(off)

N-Ch

22

33

P-Ch

60

90

Fall Time

tf

N-Ch

5

10

P-Ch

60

90

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

N-Ch

2.6

A

P-Ch

- 2.6

Pulse Diode Forward Currenta

ISM

N-Ch

20

P-Ch

- 20

Body Diode Voltage

VSD

IS = 1.5 A

N-Ch

0.73

1.2

V

IS = - 1.6 A

P-Ch

- 0.73

- 1.2

Body Diode Reverse Recovery Time

trr

N-Channel

IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C

P-Channel

IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C

N-Ch

26

40

ns

P-Ch

30

45

Body Diode Reverse Recovery Charge

Qrr

N-Ch

21

32

nC

P-Ch

24

36

Reverse Recovery Fall Time

ta

N-Ch

13

ns

P-Ch

15

Reverse Recovery Rise Time

tb

N-Ch

13

P-Ch

15

유사한 부품 번호 - SI4569DY

제조업체	부품명	데이터시트	상세설명
Vaishali Semiconductor	SI4569DY	355Kb / 4P	N- and P-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI4569DY	134Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET 01-Jan-2022
VBsemi Electronics Co.,...	SI4569DY-T1-E3	1Mb / 14P	N- and P-Channel 40V (D-S) MOSFET
Vishay Siliconix	SI4569DY	134Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET 01-Jan-2022

More results

유사한 설명 - SI4569DY

제조업체	부품명	데이터시트	상세설명
Vishay Telefunken	SI4564DY	303Kb / 15P	N- and P-Channel 40 V (D-S) MOSFET
VBsemi Electronics Co.,...	STU310DH	1Mb / 13P	N- and P-Channel 40 V (D-S) MOSFET
	VBE5415	1Mb / 13P	N- and P-Channel 40 V (D-S) MOSFET
	P2003ND5G	2Mb / 13P	N- and P-Channel 40 V (D-S) MOSFET
	4533GEH-HF	1Mb / 13P	N- and P-Channel 40 V (D-S) MOSFET
	AOD609	1Mb / 13P	N- and P-Channel 40 V (D-S) MOSFET
Vishay Siliconix	SI4561DY	141Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET 01-Jan-2022
	73224	87Kb / 8P	N- and P-Channel 40-V (D-S) MOSFET Rev. A, 17-Jan-05
	SI4564DY	154Kb / 12P	N- and P-Channel 40 V (D-S) MOSFET Rev. B, 22-Feb-10
	SI4563DY	135Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET Rev. C, 09-Mar-09
	SI3529DV	151Kb / 12P	N- and P-Channel 40-V (D-S) MOSFET Rev. C, 02-Nov-09

More results

SI4569DY 데이터시트(PDF) 3 Page - Vishay Siliconix

SI4569DY 데이터시트(HTML) 3 Page - Vishay Siliconix

유사한 부품 번호 - SI4569DY

유사한 설명 - SI4569DY

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