74LVC541ADTR2G datasheet(3/9 Pages) ONSEMI

부품명	74LVC541ADTR2G

상세설명	Low-Voltage CMOS Octal Buffer Flow Through Pinout

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MAXIMUM RATINGS

Symbol

Parameter

Value

Condition

Unit

VCC

DC Supply Voltage

−0.5 to +6.5

V

VI

DC Input Voltage

−0.5

≤ VI ≤ +6.5

V

VO

DC Output Voltage

−0.5

≤ VO ≤ +6.5

Output in 3−State

V

−0.5

≤ VO ≤ VCC + 0.5

Output in HIGH or LOW State

(Note 1)

V

IIK

DC Input Diode Current

−50

VI < GND

mA

IOK

DC Output Diode Current

−50

VO < GND

mA

+50

VO > VCC

mA

IO

DC Output Source/Sink Current

±50

mA

ICC

DC Supply Current Per Supply Pin

±100

mA

IGND

DC Ground Current Per Ground Pin

±100

mA

TSTG

Storage Temperature Range

−65 to +150

°C

TL

Lead Temperature, 1 mm from Case for

10 Seconds

TL = 260

°C

TJ

Junction Temperature Under Bias

TJ = 135

°C

qJA

Thermal Resistance (Note 2)

SOIC = 65.8

TSSOP = 110.7

°C/W

MSL

Moisture Sensitivity

Level 1

ILATCHUP

Latch−up Performance at VCC = 3.6 V

and 125

°C (Note 3)

±250

mA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. IO absolute maximum rating must be observed.

2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.

3. Tested to EIA/JES078.

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Typ

Max

Units

VCC

Supply Voltage

Operating

Functional

1.65

1.2

3.6

V

VI

Input Voltage

0

5.5

V

VO

Output Voltage

HIGH or LOW State

3−State

0

VCC

5.5

V

IOH

HIGH Level Output Current

VCC = 3.0 V − 3.6 V

VCC = 2.7 V − 3.0 V

−24

−12

mA

IOL

LOW Level Output Current

VCC = 3.0 V − 3.6 V

VCC = 2.7 V − 3.0 V

24

12

mA

TA

Operating Free−Air Temperature

−40

+125

°C

Dt/DV

Input Transition Rise or Fall Rate, VIN from 0.8 V to 2.0 V, VCC = 3.0 V

0

10

ns/V

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

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