IRL7472L1PBF datasheet(2/12 Pages) INFINEON

부품명	IRL7472L1PBF

상세설명	DirectFET짰 N-Channel Power MOSFET

Download	12 Pages

Scroll/Zoom	100%

제조업체	INFINEON [Infineon Technologies AG]

홈페이지	http://www.infineon.com

Logo

2 / 12 page

IRL7472L1TRPbF

2

2016-8-9

Notes:



Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.



Used double sided cooling , mounting pad with large heatsink.

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited) 

645

A

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 

456

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited) 

68

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V (Package Limited)

375

IDM

Pulsed Drain Current 

1500

A

PD @TC = 25°C

Maximum Power Dissipation

341

PD @TA = 25°C

Maximum Power Dissipation

3.8

Linear Derating Factor

0.025

W/°C

VGS

Gate-to-Source Voltage

± 20

V

TJ

Operating Junction and

-55 to + 175

°C

TSTG

Storage Temperature Range

Avalanche Characteristics

EAS (Thermally limited)

Single Pulse Avalanche Energy 

308

mJ

EAS (Thermally limited)

Single Pulse Avalanche Energy 

765

IAR

Avalanche Current 

See Fig.15,16, 23a, 23b

A

EAR

Repetitive Avalanche Energy 

mJ

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

RJA

Junction-to-Ambient 

–––

40

°C/W

RJA

Junction-to-Ambient 

12.5

–––

RJA

Junction-to-Ambient 

20

–––

RJC

Junction-to-Case 

–––

0.44

RJA-PCB

Junction-to-PCB Mounted

1.0

–––

W

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

40

–––

V

VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

–––

30

––– mV/°C Reference to 25°C, ID = 5.0mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

0.34 0.45

m



VGS = 10V, ID = 195A 

––– 0.52 0.70

VGS = 4.5V, ID = 98A 

VGS(th)

Gate Threshold Voltage

1.0

1.7

2.5

V

VDS = VGS, ID = 250µA

IDSS

Drain-to-Source Leakage Current

–––

1.0

µA

VDS = 40V, VGS = 0V

–––

150

VDS = 40V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

RG

Internal Gate Resistance

–––

1.0

–––



nA



TC measured with thermocouple mounted to top (Drain) of part.



Surface mounted on 1 in. square Cu

board (still air).



Mounted to a PCB with small clip

heatsink (still air)



Mounted on minimum footprint full size

board with metalized back and with

small clip heatsink (still air)

유사한 부품 번호 - IRL7472L1PBF

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRL7472L1PBF	497Kb / 11P	Brushed Motor drive applications
International Rectifier	IRL7472L1PBF	497Kb / 11P	Brushed Motor drive applications

More results

유사한 설명 - IRL7472L1PBF

제조업체	부품명	데이터시트	상세설명
International Rectifier	IRF7580MTRPBF	515Kb / 11P	DirectFET짰 N-Channel Power MOSFET
Infineon Technologies A...	IRF7480MPBF	503Kb / 12P	DirectFET짰 N-Channel Power MOSFET 2016-5-4
International Rectifier	IRF6810SPBF	283Kb / 9P	DirectFET짰Power MOSFET
	AUIRF7759L2TR	255Kb / 12P	Automotive DirectFET짰Power MOSFET
	AUIRF8736M2TR	494Kb / 12P	Automotive DirectFET짰 Power MOSFET
	AUIRF7799L2TR	272Kb / 12P	Automotive DirectFET짰 Power MOSFET
	IRF6893MPBF	220Kb / 9P	DirectFET짰 MOSFET with Schottky Diode
	IRF6892SPBF	243Kb / 9P	DirectFET짰 MOSFET with Schottky Diode
AiT Semiconductor Inc.	BSS123L	486Kb / 5P	MOSFET N-CHANNEL POWER MOSFET REV1.0
Fairchild Semiconductor	SSF7N90A	249Kb / 8P	N-CHANNEL POWER MOSFET

More results

IRL7472L1PBF 데이터시트(PDF) 2 Page - Infineon Technologies AG

IRL7472L1PBF 데이터시트(HTML) 2 Page - Infineon Technologies AG

유사한 부품 번호 - IRL7472L1PBF

유사한 설명 - IRL7472L1PBF

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

데이터시트 다운로드

링크 URL