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IRF7805PBF 데이터시트(PDF) 1 Page - Infineon Technologies AG

부품명 IRF7805PBF
상세설명  HEXFET짰 Chip-Set for DC-DC Converters
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제조업체  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IRF7805PBF 데이터시트(HTML) 1 Page - Infineon Technologies AG

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IRF7805PbF
VDSS
30V
RDS(on)
11m

QOSS
36nC
Qg
31nC
QSW
11.5nC
IRF7805PbF
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make this device ideal
for high efficiency DC-DC Converters that power the
latest generation of mobile microprocessors.
The IRF7805PbF offers maximum efficiency for mobile
CPU core DC-DC converters.
 N Channel Application Specific MOSFETs
 Ideal for Mobile DC-DC Converters
 Low Conduction Losses
 Low Switching Losses
 Lead-Free
1
2016-8-23
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
30
VGS
Gate-to-Source Voltage
± 12
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V 
13
A  
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V 
10
IDM
Pulsed Drain Current 
100
PD @TA = 25°C
Maximum Power Dissipation 
2.5
W
PD @TA = 70°C
Maximum Power Dissipation 
1.6
Linear Derating Factor
0.02
W/°C
TJ
Operating Junction and
-55 to + 150
°C 
TSTG
Storage Temperature Range
V
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
°C/W
RJL
Junction-to-Drain Lead
–––
20
RJA
Junction-to-Ambient 
–––
50
SO-8
IRF7805PbF
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRF7805PbF
SO-8
Tape and Reel
4000
IRF7805PbF
G
D
S
Gate
Drain
Source
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
HEXFET® Chip-Set for DC-DC Converters
 
 
Devices Features


유사한 부품 번호 - IRF7805PBF

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