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EN29LV800 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 28 Page - Eon Silicon Solution Inc.

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์ƒ์„ธ๋‚ด์šฉ  8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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์ œ์กฐ์‚ฌ  EON [Eon Silicon Solution Inc.]
ํ™ˆํŽ˜์ด์ง€  http://www.essi.com.tw
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EN29LV800 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 28 Page - Eon Silicon Solution Inc.

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4800 Great America Parkway, Suite 202
Tel: 408-235-8680
Santa Clara, CA 95054
Fax: 408-235-8685
28
EN29LV800
Rev 0.4 Release Date: 2002/01/29
Table 8. AC CHARACTERISTICS
Read-only Operations Characteristics
Parameter
Symbols
Speed Options
JEDEC
Standard
Description
Test
Setup
-70R
-90
Unit
tAVAV
tRC
Read Cycle Time
Min
70
90
ns
tAVQV
tACC
Address to Output Delay
CE = VIL
OE = VIL
Max
70
90
ns
tELQV
tCE
Chip Enable To Output Delay
OE = VIL
Max
70
90
ns
tGLQV
tOE
Output Enable to Output Delay
Max
30
35
ns
tEHQZ
tDF
Chip Enable to Output High Z
Max
20
20
ns
tGHQZ
tDF
Output Enable to Output High Z
Max
20
20
ns
tAXQX
tOH
Output Hold Time from
Addresses,
CE or OE ,
whichever occurs first
Min
0
0
ns
Notes:
For - 50
Vcc = 3.0V ยฑ 5%
Output Load : 1 TTL gate and 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to Vcc
Timing Measurement Reference Level, Input and Output: 1.5 V
For all others:
Vcc = 3.0V ยฑ 5%
Output Load: 1 TTL gate and 100 pF
Input Rise and Fall Times: 5 ns
Input Pulse Levels: 0.0 V to Vcc
Timing Measurement Reference Level, Input and Output: 1.5 V
Figure 5. AC Waveforms for READ Operations
Addresses
CE#
OE#
WE#
Outputs
Reset#
RY/BY#
0V
Output Valid
tRC
tACC
tOE
tCE
tOEH
tOH
tDF
HIGH Z
Addresses Stable


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EN29LV800A8 Megabit 1024K x 8-bit / 512K x 16-bit Flash Memory Boot Sector Flash Memory CMOS 3.0 Volt-only 1 2 3 4 5 MoreEon Silicon Solution Inc.
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