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EN29LV800 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Eon Silicon Solution Inc.

๋ถ€ํ’ˆ๋ช… EN29LV800
์ƒ์„ธ๋‚ด์šฉ  8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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์ œ์กฐ์‚ฌ  EON [Eon Silicon Solution Inc.]
ํ™ˆํŽ˜์ด์ง€  http://www.essi.com.tw
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EN29LV800 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 1 Page - Eon Silicon Solution Inc.

 
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4800 Great America Parkway, Suite 202
Tel: 408-235-8680
Santa Clara, CA 95054
Fax: 408-235-8685
1
EN29LV800
Rev 0.4 Release Date: 2002/01/29
da0.
FEATURES
โ€ข Single power supply operation
- Full voltage range: 2.7-3.6 volt read and write
operations for battery-powered applications.
- Regulated voltage range: 3.0-3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors.
โ€ข Manufactured on 0.28 ยตm process technology
โ€ข High performance
- Access times as fast as 70 ns
โ€ข Low power consumption (typical values at 5
MHz)
- 7 mA typical active read current
- 15 mA typical program/erase current
- 1
ยตA typical standby current (standard access
time to active mode)
โ€ข Flexible Sector Architecture:
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors (byte mode)
- One 8 Kword, two 4 Kword, one 16 Kword
and fifteen 32 Kword sectors (word mode)
- Supports full chip erase
- Individual sector erase supported
- Sector protection:
Hardware locking of sectors to prevent
program or erase operations within individual
sectors
Additionally, temporary Sector Group
Unprotect allows code changes in previously
locked sectors.
โ€ข High performance program/erase speed
- Byte/Word program time: 8ยตs typical
- Sector erase time: 500ms typical
โ€ข JEDEC Standard program and erase
commands
โ€ข JEDEC standard DATA polling and toggle
bits feature
โ€ข Single Sector and Chip Erase
โ€ข Sector Unprotect Mode
โ€ข Embedded Erase and Program Algorithms
โ€ข Erase Suspend / Resume modes:
Read or program another Sector during
Erase Suspend Mode
โ€ข 0.28 ยตm double-metal double-poly
triple-well CMOS Flash Technology
โ€ข Low Vcc write inhibit < 2.5V
โ€ข >100K program/erase endurance cycle
โ€ข 48-pin TSOP (Type 1)
โ€ข Commercial Temperature Range
GENERAL DESCRIPTION
The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory,
organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10ยตs.
The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29LV800 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE)
controls, which eliminate bus contention issues. This device is designed to allow either single Sector
or full chip erase operation, where each Sector can be individually protected against program/erase
operations or temporarily unprotected to erase or program. The device can sustain a minimum of
100K program/erase cycles on each Sector.
EN29LV800
8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory
Boot Sector Flash Memory, CMOS 3.0 Volt-only


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EN29LV800A8 Megabit 1024K x 8-bit / 512K x 16-bit Flash Memory Boot Sector Flash Memory CMOS 3.0 Volt-only 1 2 3 4 5 MoreEon Silicon Solution Inc.
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EN29LV640T64 Megabit 8M x 8-bit / 4M x 16-bit Flash Memory Boot Sector Flash Memory CMOS 3.0 Volt-only 1 2 3 4 5 MoreEon Silicon Solution Inc.
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