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EN29LV800 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 11 Page - Eon Silicon Solution Inc.

๋ถ€ํ’ˆ๋ช… EN29LV800
์ƒ์„ธ๋‚ด์šฉ  8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only
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์ œ์กฐ์‚ฌ  EON [Eon Silicon Solution Inc.]
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EN29LV800 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 11 Page - Eon Silicon Solution Inc.

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4800 Great America Parkway, Suite 202
Tel: 408-235-8680
Santa Clara, CA 95054
Fax: 408-235-8685
11
EN29LV800
Rev 0.4 Release Date: 2002/01/29
COMMAND DEFINITIONS
The operations of the EN29LV800 are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register.
The sequences for the
specified operation are defined in the Command Definitions table (Table 5). Incorrect addresses,
incorrect data values or improper sequences will reset the device to Read Mode.
Table 5. EN29LV800 Command Definitions
Bus Cycles
1
st
Write Cycle
2
nd
Write Cycle
3
rd
Write Cycle
4
th
Write Cycle
5
th
Write Cycle
6
th
Write Cycle
Command
Sequence
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Read
1
RA
RD
Reset
1
xxx
F0
Word
555
2AA
555
000/
001
7F/
1C
Manufacturer
ID
Byte
4
AAA
AA
555
55
AAA
90
000/
001
7F/
1C
Word
555
2AA
555
X01
22DA
Device ID
Top Boot
Byte
4
AAA
AA
555
55
AAA
90
X02
DA
Word
555
2AA
555
X01
225B
Device ID
Bottom Boot
Byte
4
AAA
AA
555
55
AAA
90
X02
5B
XX00
Word
555
2AA
555
(SA)
X02
XX01
00
Sector Protect
Verify
Byte
4
AAA
AA
555
55
AAA
90
(SA)
X04
01
Word
555
2AA
555
Program
Byte
4
AAA
AA
555
55
AAA
A0
PA
PD
Word
555
2AA
555
Unlock Bypass
Byte
3
AAA
AA
555
55
AAA
20
Unlock Bypass Program
2
XXX
A0
PA
PD
Unlock Bypass Reset
2
XXX
90
XXX
00
Word
555
2AA
555
555
2AA
555
Chip Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Word
555
2AA
555
555
2AA
Sector Erase
Byte
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Erase Suspend
1
xxx
B0
Erase Resume
1
xxx
30
Address and Data values indicated in hex
RA = Read Address: address of the memory location to be read. This is a read cycle.
RD = Read Data: data read from location RA during Read operation. This is a read cycle.
PA = Program Address: address of the memory location to be programmed. X = Donโ€™t-Care
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the Sector to be erased or verified. Address bits A18-A12 uniquely select any Sector.
Reading Array Data
The device is automatically set to reading array data after power up. No commands are required to
retrieve data. The device is also ready to read array data after completing an Embedded Program or
Embedded Erase algorithm.
Following an Erase Suspend command, Erase Suspend mode is entered. The system can read array
data using the standard read timings, with the only difference in that if it reads at an address within erase
suspended sectors, the device outputs status data. After completing a programming operation in the
Erase Suspend mode, the system may once again read array data with the same exception.


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