전자부품 데이터시트 검색엔진 |
|
KMB9520 데이터시트(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
|
KMB9520 데이터시트(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 4 page KMB9520 KERSMI ELECTRONIC CO.,LTD. -100V P-channel MOSFET www.kersemi.com 1 Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. TO-263 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 -6.8 A Continuous Drain Current-T=100℃ -4.8 Pulsed Drain Current2 -27 EAS Single Pulse Avalanche Energy3 300 mJ PD Power Dissipation4 60 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics BVDSS RDSON ID -100V 0.60Ω -6.8A |
유사한 부품 번호 - KMB9520 |
|
유사한 설명 - KMB9520 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |