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KMB9520 데이터시트(PDF) 1 Page - Kersemi Electronic Co., Ltd.

부품명 KMB9520
상세설명  Advanced high cell denity trench technology for ultra RDS(ON)
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제조업체  KERSEMI [Kersemi Electronic Co., Ltd.]
홈페이지  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

KMB9520 데이터시트(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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KMB9520
KERSMI ELECTRONIC CO.,LTD.
-100V P-channel MOSFET
www.kersemi.com
1
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
TO-263
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current-1
-6.8
A
Continuous Drain Current-T=100℃
-4.8
Pulsed Drain Current2
-27
EAS
Single Pulse Avalanche Energy3
300
mJ
PD
Power Dissipation4
60
W
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+175
Thermal Characteristics
BVDSS
RDSON
ID
-100V
0.60Ω
-6.8A


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