TPC8401 datasheet(2/11 Pages) TOSHIBA

부품명	TPC8401

상세설명	TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)

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제조업체	TOSHIBA [Toshiba Semiconductor]

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TPC8401

2002-05-17

2

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Single-device operation

(Note 3a)

Rth (ch-a) (1)

83.3

Thermal resistance, channel to ambient

(t = 10s)

(Note 2a) Single-device value at

dual operation

(Note 3b)

Rth (ch-a) (2)

125

Single-device operation

(Note 3a)

Rth (ch-a) (1)

167

Thermal resistance, channel to ambient

(t = 10s)

(Note 2b) Single-device value at

dual operation

(Note 3b)

Rth (ch-a) (2)

278

°C/W

Marking

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a)

b) Device mounted on a glass-epoxy board (b)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.)

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.)

Note 4:

a) VDD = −24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = −4.5 A

b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.0 A

Note 5: Repetitive rating: pulse width limited by maximum channel temperature

Note 6:

• on lower left of the marking indicates Pin 1.

* shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of

manufacture: January to December are denoted by letters A to L respectively.)

*

Type

TPC8401

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(a)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(b)

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