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LM3303N 데이터시트(PDF) 3 Page - National Semiconductor (TI) |
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LM3303N 데이터시트(HTML) 3 Page - National Semiconductor (TI) |
3 / 10 page LM3303 and LM3403 (Continued) Electrical Characteristics TA e 25 C VCC e g15V unless otherwise specified The following specifications apply for b40 C s TA s a85 C for the LM3303 and 0 C s TA s a70 C for the LM3403 Symbol Parameter Conditions LM3303 LM3403 Units Min Typ Max Min Typ Max VIO Input Offset Voltage 10 10 mV D VIO DT Input Offset Voltage 10 10 m V C Temperature Sensitivity IIO Input Offset Current 250 200 nA D IIO DT Input Offset Current 50 50 pA C Temperature Sensitivity IIB Input Bias Current 1000 800 nA AVS Large Signal Voltage Gain VO e g10V 15 15 VmV RL t 20 kX VOP Output Voltage Swing RL e 20 kX g 10 g 10 V LM3303 and LM3403 Electrical Characteristics TA e 25 C Vae 50V Vbe GND unless otherwise specified Symbol Parameter Conditions LM3303 LM3403 Units Min Typ Max Min Typ Max VIO Input Offset Voltage 80 20 80 mV IIO Input Offset Current 75 30 50 nA IIB Input Bias Current 500 200 500 nA ICC Supply Current 25 70 25 70 mA PSRR Power Supply 150 150 m VV Rejection Ratio AVS Large Signal Voltage Gain RL t 20 kX 20 200 20 200 VmV VOP Output Voltage Swing RL e 10 kX 33 33 (Note 5) 50V s Va s 30V (Va)(Va) V RL e 10 kX b 20 b 20 CS Channel Separation 10 Hz s f s 20 kHz b 120 b 120 dB (Input Referenced) Note 1 TJ Max e 150 C for the Molded DIP and SO-14 and 175 C for the Ceramic DIP Note 2 Ratings apply to ambient temperature at 25 C Above this temperature derate the 14L-Ceramic DIP at 91 mW C the 14L-Molded DIP at 83 mW C and the SO-14 at 75 mW C Note 3 For supply voltage less than 30V between Va and Vb the absolute maximum input voltage is equal to the supply voltage Note 4 Not to exceed maximum package power dissipation Note 5 Output will swing to ground 3 |
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