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CSD18512Q5B 데이터시트(PDF) 1 Page - Texas Instruments |
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CSD18512Q5B 데이터시트(HTML) 1 Page - Texas Instruments |
1 / 13 page VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 D007 TC = 25°C, I D = 30 A TC = 125°C, I D = 30 A Qg - Gate Charge (nC) 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 D004 ID = 30 A, VDS = 20 V 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18512Q5B SLPS624 – DECEMBER 2016 CSD18512Q5B 40 V N-Channel NexFET™ Power MOSFET 1 1 Features 1 • Low RDS(ON) • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb-Free Terminal Plating • RoHS Compliant • Halogen-Free • SON 5 mm × 6 mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40 V, 1.3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain to source voltage 40 V Qg Gate charge total (10 V) 75 nC Qgd Gate charge gate to drain 13.3 nC RDS(on) Drain to source on resistance VGS = 4.5 V 1.8 m Ω VGS = 10 V 1.3 m Ω VGS(th) Threshold voltage 1.6 V Ordering Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD18512Q5B 2500 13-Inch Reel SON 5 mm × 6 mm Plastic Package Tape and Reel CSD18512Q5BT 250 7-Inch Reel (1) For all available packages, see the orderable addendum at the end of the datasheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain to source voltage 40 V VGS Gate to source voltage ±20 V ID Continuous drain current (package limited) 100 A Continuous drain current (silicon limited), TC = 25°C 211 Continuous drain current(1) 32 IDM Pulsed drain current(2) 400 A PD Power dissipation(1) 3.1 W Power dissipation, TC = 25°C 139 TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C EAS Avalanche energy, single pulse ID = 64 A, L = 0.1 mH, RG = 25 Ω 205 mJ (1) Typical RθJA = 40°C/W on a 1 inch 2 , 2 oz. Cu pad on a 0.06 inch thick FR4 PCB. (2) Max RθJC = 0.9°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge |
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