If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Input Voltage (IN to GND)

35V

Voltage ON/OFF to GND

5.5V

Power Dissipation (Note 5)

400 mW

Junction Temp. (T

+150˚C

Ambient Storage Temp.

−65 to +150˚C

Soldering Time, Temp. (Note 6)

Wave

Infrared

Vapor Phase

4sec., 260˚C

10sec., 240˚C

75sec., 219˚C

ESD (Note 7)

ON/OFF

All Other Pins

1.0kV

2.0kV

Maximum Input Voltage (IN to GND)

30V

Voltage ON/OFF to GND

0to5V

Junction Temperature (T

−40 to +125˚C

Maximum Power Dissipation (Note 8)

300 mW

Electrical Characteristics

LM3490-3.3, LM3490-5.0

V

pearing in boldface type apply over the entire junction temperature range for operation, −40 to +125˚C. (Notes 9, 10, 11)

Nominal Output Voltage (V

3.3V

5.0V

Units

Symbol

Parameter

Conditions

Typical

Limit

Typical

Limit

V

OUT

Output Voltage

1 mA

≤ I

3.30

3.17

3.14

3.43

3.46

5.00

4.80

4.75

5.20

5.25

V

V(min)

V(min)

V(max)

V(max)

∆V

OUT

Line Regulation

V

I

7

25

9

25

mV

mV(max)

∆V

OUT

Load Regulation

10 mA

≤ I

15

40

15

40

mV

mV(max)

I

GND

Ground Pin

Current

V

No Load

V

22

mA

44

mA(max)

V

0.1

0.1

µA

55

µA(max)

V

V

OUT

Dropout Voltage

I

0.7

0.9

1.0

0.7

0.9

1.0

V

V(max)

V(max)

I

0.9

1.1

1.2

0.9

1.1

1.2

V

V(max)

V(max)

e

n

Output Noise

Voltage

V

Bandwidth: 10 Hz to 100 kHz

100

150

µV

rms

V

IL

Maximum Low

Level Input

Voltage at

ON/OFF

0.2

0.2

V(max)

V

IH

Minimum High

Level Input

Voltage at

ON/OFF

2.0

2.0

V(min)

I

IL

V

−1

−1

µA(max)

I

IH

V

11

µA

20

20

µA(max)

www.national.com

3