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FP31QF-F 데이터시트(PDF) 3 Page - WJ Communication. Inc.

부품명 FP31QF-F
상세설명  2-Watt HFET
Download  13 Pages
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제조업체  WJCI [WJ Communication. Inc.]
홈페이지  http://www.wj.com
Logo WJCI - WJ Communication. Inc.

FP31QF-F 데이터시트(HTML) 3 Page - WJ Communication. Inc.

  FP31QF-F Datasheet HTML 1Page - WJ Communication. Inc. FP31QF-F Datasheet HTML 2Page - WJ Communication. Inc. FP31QF-F Datasheet HTML 3Page - WJ Communication. Inc. FP31QF-F Datasheet HTML 4Page - WJ Communication. Inc. FP31QF-F Datasheet HTML 5Page - WJ Communication. Inc. FP31QF-F Datasheet HTML 6Page - WJ Communication. Inc. FP31QF-F Datasheet HTML 7Page - WJ Communication. Inc. FP31QF-F Datasheet HTML 8Page - WJ Communication. Inc. FP31QF-F Datasheet HTML 9Page - WJ Communication. Inc. Next Button
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Specifications and information are subject to change without notice
WJ Communications, Inc
• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
November 2004
FP31QF
2-Watt HFET
Product Information
The Communications Edge
TM
Application Circuit: 870 – 960 MHz (FP31QF-PCB900)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +9 V, Ids = 450 mA, 25°C
Frequency
MHz
870
915
960
S21 – Gain
dB
18.3
18
17.7
S11 – Input Return Loss
dB
-15
-20
-16
S22 – Output Return Loss
dB
-9.3
-12
-16
Output P1dB
dBm
+33.9
+34
+33.7
Output IP3
(+18 dBm / tone, 1 MHz spacing)
dBm
+46
Noise Figure
dB
3.4
3.5
3.5
IS-95 Channel Power
@ -45 dBc ACPR
dBm
+27.8
Circuit Board Material: .014” FR-4 (εr = 4.6),
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
The main microstrip line has a line impedance of 50 Ω.
Bill of Materials
Ref. Desig.
Value
Part style
Size
C1, C4, C8, C10
100 pF
Chip capacitor
0603
C2, C3
4.7 pF
Chip capacitor
0603
C6, C11
0.018
µF
Chip capacitor
0805
C7
1000 pF
Chip capacitor
0603
C12
0.1
µF
Chip capacitor
1206
L1, L2
27 nH
Wirewound chip inductor
0805
L3
3.3 nH
Multilayer chip inductor
0603
R1
10 Ω
Chip resistor
0603
R2
51 Ω
Chip resistor
0603
Q1
FP31QF
WJ 2W HFET
QFN 6x6
C5
Do Not Place
• The C2 and C3 placements are at silk screen markers, “H” and “9.5”, respectively.
• The via hole spacing along the main microstrip line is .040”.
• The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
• The transmission line lengths shown in the schematic are from the FP31QF
device edge to the component edge.
RES
R=
ID=
10 Ohm
R1
CAP
C=
ID=
10 0 pF
C1
IND
L=
ID=
27 nH
L2
CAP
C=
ID =
10 0 pF
C10
CAP
C=
ID=
1.8e 4 pF
C11
CAP
C=
ID=
1e 5 pF
C12
CAP
C=
ID=
10 0 pF
C4
CA P
C=
ID=
1.8e 4 pF
C8
CA P
C=
ID=
10 0 pF
C6
CAP
C=
ID =
100 0 pF
C7
CAP
C=
ID=
4.7 pF
C3
IND
L=
ID=
27 nH
L1
RES
R=
ID=
51 Ohm
R2
CAP
C=
ID=
DNP pF
C5
IND
L=
ID=
3.3 nH
L3
TL INP
F0 =
Loss=
Eeff=
L=
Z0 =
ID=
0 MHz
0
3.46
520 mil
50 Ohm
TL2
CAP
C=
ID=
4.7 pF
C2
TL INP
F0 =
Loss=
Eeff=
L=
Z0 =
ID=
0 MHz
0
3.46
500 mil
50 Ohm
TL1
1
2
SUB CKT
NET=
ID=
"FP31QF"
Q1
PORT
Z=
P=
50 Ohm
1
PORT
Z=
P=
50 Ohm
2
-Vgg
Vds=9V @ 450 mA
C2
C3


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