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2SD1523 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 2SD1523
상세설명  isc Silicon NPN Darlington Power Transistor
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제조업체  ISC [Inchange Semiconductor Company Limited]
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Darlington Power Transistor
2SD1523
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 30mA, IB= 0
450
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 20mA ,IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 8A, IB= 16mA
1.6
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 12A, IB= 24mA
2.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 8A, IB= 16mA
2.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 12A, IB= 24mA
3.0
ICBO
Collector Cutoff current
VCB= 450V, IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
20
mA
hFE
DC Current Gain
IC= 8A; VCE= 3V
500
Switching Times
ton
Turn-On Time
IC = 8A,IB1 = IB2= 16mA
1.5
μ
s
tstg
Storage Time
7.0
μ
s
tf
Fall Time
4.0
μ
s


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