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IRLIZ24N 데이터시트(PDF) 1 Page - International Rectifier |
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IRLIZ24N 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET IRLIZ24N PD - 9.1344 VDSS = 55V RDS(on) = 0.06Ω ID = 14A S D G TO-220 FULLPAK l Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Parameter Min. Typ. Max. Units RθJC Junction-to-Case –––– –––– 5.8 RθJA Junction-to-Ambient –––– –––– 65 °C/W Thermal Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 9.9 A IDM Pulsed Drain Current 72 PD @TC = 25°C Power Dissipation 26 W Linear Derating Factor 0.17 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 68 mJ IAR Avalanche Current 11 A EAR Repetitive Avalanche Current 4.5 mJ dv/dt Peak Diode Recovery dv/dt 4.6 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Absolute Maximum Ratings PRELIMINARY Next Data Sheet Index Previous Datasheet To Order |
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