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SMA6J16A 데이터시트(PDF) 1 Page - Shanghai Semitech Semiconductor Co., Ltd |
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SMA6J16A 데이터시트(HTML) 1 Page - Shanghai Semitech Semiconductor Co., Ltd |
1 / 5 page SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD SMA6J Series 600W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 600W @10 x 1000 us Pulse l Low profile package. l Excellent clamping capability. l Glass passivated junction. l Fast response time: typically less than 1ps from 0 Volts to BV min l Typical IR less than 1uA when VBR min above 12V. l IEC 61000-4-2 ESD 30KV(Air), 30KV(Contact) l ESD protection of data lines in accordance with IEC 61000-4-2 l EFT protection of data lines in accordance with IEC 61000-4-4 l Halogen free and RoHS compliant l Lead-free finish Mechanical Characteristics l CASE: SMA (DO-214AC) Molded Plastic over glass passivated junction. l Mounting Position: Any l Polarity: by cathode band denotes uni-directional device, none cathode band denotes bi-directional device. l Terminal: Solder plated Maximum Ratings And Characteristics @ 25°C Ambient Temperature (unless otherwise noted) Parameter Symbol Value Units Peak Pulse Power Dissipation on 10/1000 us Waveform (Note 1, 2, FIG.1) PPPM Min 600 W Power Dissipation on Infinite Heat Sink at TL=50°C PD 3.3 W Peak Pulse Current of on 10/1000us Waveform (Note 1, FIG.3) IPPM See Table 1 A Peak Forward Surge Current, 8.3ms Single Half Sine-Wave (Note 2. 3) IFSM 60 A Operating Junction Temperature Range TJ -55 to 150 °C Storage Temperature Range TSTG -55 to 150 °C Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25°C per Fig.2. 2. Mounted on 5.0x5.0mm 2 (0.03mm thick) Copper Pads to each terminal. 3. Measured on 8.3ms single half sine-wave, or equivalent square wave, for Unidirectional device only. Rev. 2.0, 10-Nov.-16 WWW.SEMITECH.CN SMA Bi-directional Uni-directional Cathode Anode |
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