SSIG15N135H

2015.03.09

Version : 1.0

page 2 of 9

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Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

Junction-to-case①

—

0.6

℃/W

Junction-to-ambient

②

—

40

℃/W

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Collector-to-Emitter breakdown

voltage

1350

—

—

V

Collector-Emitter Saturation voltage

—

1.9

2.2

V

—

2.05

—

V

Gate threshold voltage

4.8

5.8

6.8

V

Zero gate voltage collector current

—

—

100

μA

Gate-to-Emitter forward leakage

—

—

300

μA

—

—

-300

Total gate charge

—

165

—

nC

Gate-to-Emitter charge

—

12

—

Gate-to-Collector("Miller") charge

—

55

—

Turn-Off delay time

—

190

—

ns

Fall time

—

100

—

Turn-Off delay time

—

0.8

—

mJ

Input capacitance

—

1250

—

pF

ƒ = 1MHz

Output capacitance

—

40

—

Reverse transfer capacitance

—

32

—

Reverse Recovery Time

—

230

—

ns

20

A/μs

Reverse Recovery Charge

—

2450

—

nC

Notes

:

①These curves are based on the junction-to-case thermal impedance which is measured with the

device mounted to a large heat sink, assuming maximum junction temperature of TJ(MAX)=175°C.