전자부품 데이터시트 검색엔진 |
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NE681 데이터시트(PDF) 2 Page - NEC |
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NE681 데이터시트(HTML) 2 Page - NEC |
2 / 20 page NE681 SERIES PART NUMBER NE68133 NE68135 NE68139/39R EIAJ1 REGISTERED NUMBER 2SC3583 2SC3604 2SC4094 PACKAGE OUTLINE 33 35 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 8 V, IC = 20 mA GHz 9.0 9.0 9.0 VCE = 3 V, IC = 7 mA GHz NF Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz dB 1.2 2 1.2 2 f = 2 GHz dB 1.6 2.3 GNF Associated Gain at VCE = 8 V, IC = 7 mA, f = 1 GHz dB 13 13.5 f = 2 GHz dB 12 |S21E|2 Insertion Power Gain at VCE = 8 V, IC = 20 mA, f = 1 GHz dB 11 12.5 15 f = 2 GHz dB 7 9 11 8.5 hFE Forward Current Gain2 at VCE= 8 V, IC = 20 mA VCE = 3 V, IC = 7 mA 50 100 250 50 100 250 50 100 200 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA µA 1.0 1.0 1.0 CRE3 Feedback Capacitance at VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.35 0.9 0.2 0.7 0.25 0.8 RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 625 590 625 PT Total Power Dissipation mW 200 295 200 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE68100 NE68118 NE68119 NE68130 EIAJ1 REGISTERED NUMBER 2SC5012 2SC5007 2SC4227 PACKAGE OUTLINE 00 (CHIP) 18 19 30 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 8 V, IC = 20 mA GHz 9.0 9.0 VCE = 3 V, IC = 7 mA GHz 7.0 7.0 NF Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz dB 1.2 2.5 1.4 1.5 f = 2 GHz dB 1.6 2.3 1.8 1.6 GNF Associated Gain at VCE = 8 V, IC = 7 mA, f = 1 GHz dB 14 14 13.5 f = 2 GHz dB 12 10 9 |S21E|2 Insertion Power Gain at VCE = 8 V, IC = 20 mA, f = 1 GHz dB 17 13 15 14 13 f = 2 GHz dB 9 11 9 8 7.5 hFE Forward Current Gain2 at VCE = 8 V, IC = 20 mA 50 100 250 50 100 250 VCE = 3 V, IC = 7 mA 80 160 40 240 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 mA µA 1.0 1.0 1.0 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 mA µA 1.0 1.0 1.0 1.0 CRE3 Feedback Capacitance at VCB = 3 V, IE = 0 mA, f = 1 MHz pF 0.45 0.9 0.45 0.9 VCB = 10 V, IE = 0 mA, f = 1 MHz pF 0.2 0.7 0.25 0.8 RTH (J-A) Thermal Resistance (Junction to Ambient) °C/W 80 833 1000 833 PT Total Power Dissipation mW 600 150 100 150 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed (PW ≤ 350 ms, duty cycle ≤ 2 %). 3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. ELECTRICAL CHARACTERISTICS (TA = 25°C) |
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