BC856BDW datasheet(5/6 Pages) YEASHIN

부품명	BC856BDW

상세설명	Dual General Purpose Transistors

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REV.02 20120903

DEVICE CHARACTERISTICS

SINGLE PULSE

t 1

Z

θJA (t) = r(t) R θJA

R

θJA = 328°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

1

T

J(pk) – T C = P (pk) R

θJC (t)

t 2

P (pk)

DUTY CYCLE, D = t 1 /t 2

D=0.5

0.2

0.1

0.05

0.02

0.01

t, TIME (ms)

Figure 13. Thermal Response

0

1.0

10

100

1.0K

10K

100K

1.0M

1.0

0.1

0.01

0.001

-200

-100

-50

-10

-5.0

-2.0

-1.0

-5.0

-10

-30

-45

-65

-100

V

CE , COLLECTOR–EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

The safe operating area curves indicate I C –V CE limits of

thetransistor that must be observed for reliable operation.

Collector load lines for specific circuits must fall below the

limits indicated by the applicable curve.

The data of Figure 14 is based upon T J(pk) = 150°C; T C or

T A is variable depending upon conditions. Pulse curves are

valid for duty cycles to 10% provided T J(pk) < 150°C. T J

(pk) may be calculated from the data in Figure 13. At high

case or ambient temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by the secondary breakdown.

BC85xBDW/CDW Series

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BC856BDW 데이터시트(PDF) 5 Page - Yea Shin Technology Co., Ltd

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