전자부품 데이터시트 검색엔진 |
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TIP106 데이터시트(PDF) 2 Page - ON Semiconductor |
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TIP106 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 7 page TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) www.onsemi.com 2 MAXIMUM RATINGS Rating Symbol TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 Unit Collector − Emitter Voltage VCEO 60 80 100 Vdc Collector − Base Voltage VCB 60 80 100 Vdc Emitter − Base Voltage VEB 5.0 Vdc Collector Current − Continuous − Peak IC 8.0 15 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 80 0.64 W W/°C Unclamped Inductive Load Energy (1) E 30 mJ Total Power Dissipation @ TA = 25°C Derate above 25°C PD 2.0 0.016 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.56 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1.1 A, L = 50 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) TIP100, TIP105 TIP101, TIP106 TIP102, TIP107 VCEO(sus) 60 80 100 − − − Vdc Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP100, TIP105 (VCE = 40 Vdc, IB = 0) TIP101, TIP106 (VCE = 50 Vdc, IB = 0) TIP102, TIP107 ICEO − − − 50 50 50 mAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) TIP100, TIP105 (VCB = 80 Vdc, IE = 0) TIP101, TIP106 (VCB = 100 Vdc, IE = 0) TIP102, TIP107 ICBO − − − 50 50 50 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 8.0 mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) hFE 1000 200 20,000 − − Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) (IC = 8.0 Adc, IB = 80 mAdc) VCE(sat) − − 2.0 2.5 Vdc Base−Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.8 Vdc DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) hfe 4.0 − − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP105, TIP106, TIP107 TIP100, TIP101, TIP102 Cob − − 300 200 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. |
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