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ADF4356BCPZ 데이터시트(PDF) 6 Page - Analog Devices

부품명 ADF4356BCPZ
상세설명  6.8 GHz Wideband Synthesizer with Integrated VCO
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ADF4356
Data Sheet
Rev. 0 | Page 6 of 35
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
VRF, DVDD, AVDD to GND1
−0.3 V to +3.6 V
AVDD to DVDD
−0.3 V to +0.3 V
VP, VVCO to GND1
−0.3 V to +5.8 V
CPOUT to GND1
−0.3 V to VP + 0.3 V
Digital Input/Output Voltage to GND1
−0.3 V to DVDD + 0.3 V
Analog Input/Output Voltage to GND1
−0.3 V to AVDD + 0.3 V
REFINA, REFINB to GND1
−0.3 V to AVDD + 0.3 V
REFINA to REFINB
±2.1 V
Operating Temperature Range
−40°C to +85°C
Storage Temperature Range
−65°C to +125°C
Maximum Junction Temperature
150°C
Reflow Soldering
Peak Temperature
260°C
Time at Peak Temperature
40 sec
Electrostatic Discharge (ESD)
Charged Device Model
1000 V
Human Body Model
2000 V
1
GND = AGND = SDGND = AGNDRF = AGNDVCO = CPGND = 0 V.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
The ADF4356 is a high performance RF integrated circuit with
an ESD rating of 2 kV and is ESD sensitive. Take proper
precautions for handling and assembly.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Table 4. Thermal Resistance
Package Type
θJA
Unit
CP-32-121
27.3
°C/W
1
Test Condition 1: thermal impedance simulated values are based on use of a
PCB with the thermal impedance paddle soldered to GND1.
TRANSISTOR COUNT
The transistor count for the ADF4356 is 134,486 (CMOS) and
3874 (bipolar).
ESD CAUTION


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