© Semiconductor Components Industries, LLC, 1994

November, 2016 − Rev. 8

1

Publication Order Number:

BCW68GLT1/D

BCW68GL

General Purpose Transistor

PNP Silicon

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

−45

Vdc

Collector−Base Voltage

−60

Vdc

Emitter−Base Voltage

−5.0

Vdc

Collector Current − Continuous

−800

mAdc

Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation

Alumina Substrate (Note 2)

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

−55 to +150

°C

1. FR−5 = 1.0

0.75

0.062 in.

2. Alumina = 0.4

0.3

0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

DG

= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

MARKING DIAGRAM

1

2

3

Device

Package

ORDERING INFORMATION

BCW68GLT1G,

NSVBCW68GLT1G

SOT−23

(Pb−Free)

3000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

DG M

G

G

COLLECTOR

3

1

BASE

2

EMITTER

(Note: Microdot may be in either location)

BCW68GLT3G

SOT−23

(Pb−Free)

10000 / Tape &

Reel

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.

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