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BCW65ALT1G 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 BCW65ALT1G
상세설명  General Purpose Transistor
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BCW65ALT1G 데이터시트(HTML) 2 Page - ON Semiconductor

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BCW65ALT1G, BCW65CLT1G
www.onsemi.com
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
32
Vdc
Collector − Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0)
V(BR)CES
60
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
ICES
20
20
nAdc
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
20
nAdc
ON CHARACTERISTICS
DC Current Gain
BCW65ALT1
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
35
75
100
35
250
DC Current Gain
BCW65CLT1
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
80
180
250
100
630
Collector − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.7
0.3
Vdc
Base − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
2.0
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current − Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
12
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
80
pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
10
dB
SWITCHING CHARACTERISTICS
Turn−On Time
(IB1 = IB2 = 15 mAdc)
ton
100
ns
Turn−Off Time
(IC = 150 mAdc, RL = 150 W)
toff
400
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.


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