전자부품 데이터시트 검색엔진 |
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IRFPS59N60C 데이터시트(PDF) 1 Page - International Rectifier |
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IRFPS59N60C 데이터시트(HTML) 1 Page - International Rectifier |
1 / 3 page IRFPS59N60C 11/2/99 www.irf.com 1 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 59 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A IDM Pulsed Drain Current 240 PD @TC = 25°C Power Dissipation 390 W Linear Derating Factor 3.1 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt TBD V/ns TJ Operating Junction and -40 to + 150 TSTG Storage Temperature Range -55 to + 150 Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Recommended clip force 20 N SMPS MOSFET HEXFET® Power MOSFET Absolute Maximum Ratings l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching Benefits Applications l Low Gate Charge Qg Reduces Drive Required l Improved Gate Resistance for Faster Switching l Fully Characterized Capacitance and Avalanche Voltage and Current l Lowest Conduction Loss in Package Outline l Effective COSS specified (See AN 1001) VDSS RDS(on) max ID 600V 0.045 Ω 59A Applicable Off Line SMPS Topologies: l Power Factor Correction Boost l Full Bridge PD - 90380 Super-247™ PROVISIONAL |
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