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IRHNJ58130 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRHNJ58130
상세설명  RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRHNJ58130 데이터시트(HTML) 2 Page - International Rectifier

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IRHNJ57130, JANSR2N7481U3
Pre-Irradiation
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.11
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.06
VGS = 12V, ID = 16A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
13
S ( )VDS > 15V, IDS = 16A ➃
IDSS
Zero Gate Voltage Drain Current
10
VDS= 80V ,VGS=0V
——
25
VDS = 80V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
50
VGS =12V, ID = 22A
Qgs
Gate-to-Source Charge
7.4
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
20
td(on)
Turn-On Delay Time
25
VDD = 50V, ID = 22A,
tr
Rise Time
100
VGS =12V, RG = 7.5Ω
td(off)
Turn-Off Delay Time
35
tf
Fall Time
30
LS + LD
Total Inductance
4.0
Ciss
Input Capacitance
1005
VGS = 0V, VDS = 25V
Coss
Output Capacitance
365
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
50
nA
nH
ns
µA
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
1.67
RthJ-PCB
Junction-to-PC board
6.9
soldered to a 2” square copper-clad board
°C/W
Measured from the center of
drain pad to center of source pad
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
* Current is limited by package
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
22*
ISM
Pulse Source Current (Body Diode) ➀
——
88
VSD
Diode Forward Voltage
1.2
V
Tj = 25°C, IS = 22A, VGS = 0V ➃
trr
Reverse Recovery Time
250
ns
Tj = 25°C, IF = 22A, di/dt ≤100A/µs
QRR Reverse Recovery Charge
850
nC
VDD ≤ 25V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A


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