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IRHNJ58130 데이터시트(PDF) 2 Page - International Rectifier |
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IRHNJ58130 데이터시트(HTML) 2 Page - International Rectifier |
2 / 8 page IRHNJ57130, JANSR2N7481U3 Pre-Irradiation 2 www.irf.com Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.11 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.06 Ω VGS = 12V, ID = 16A Resistance VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 13 — — S ( )VDS > 15V, IDS = 16A ➃ IDSS Zero Gate Voltage Drain Current — — 10 VDS= 80V ,VGS=0V —— 25 VDS = 80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 50 VGS =12V, ID = 22A Qgs Gate-to-Source Charge — — 7.4 nC VDS = 50V Qgd Gate-to-Drain (‘Miller’) Charge — — 20 td(on) Turn-On Delay Time — — 25 VDD = 50V, ID = 22A, tr Rise Time — — 100 VGS =12V, RG = 7.5Ω td(off) Turn-Off Delay Time — — 35 tf Fall Time — — 30 LS + LD Total Inductance — 4.0 — Ciss Input Capacitance — 1005 — VGS = 0V, VDS = 25V Coss Output Capacitance — 365 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 50 — nA ➃ nH ns µA Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 1.67 RthJ-PCB Junction-to-PC board — 6.9 — soldered to a 2” square copper-clad board °C/W Measured from the center of drain pad to center of source pad Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page * Current is limited by package Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 22* ISM Pulse Source Current (Body Diode) ➀ —— 88 VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 22A, VGS = 0V ➃ trr Reverse Recovery Time — — 250 ns Tj = 25°C, IF = 22A, di/dt ≤100A/µs QRR Reverse Recovery Charge — — 850 nC VDD ≤ 25V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A |
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