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BC847CDW1T1G 데이터시트(PDF) 2 Page - ON Semiconductor |
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BC847CDW1T1G 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 11 page BC846BDW1, BC847BDW1, BC848CDW1 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mA) BC846 BC847 BC848 V(BR)CEO 65 45 30 − − − − − − V Collector − Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) BC846 BC847 BC848 V(BR)CES 80 50 30 − − − − − − V Collector − Base Breakdown Voltage (IC = 10 mA) BC846 BC847 BC848 V(BR)CBO 80 50 30 − − − − − − V Emitter − Base Breakdown Voltage (IE = 1.0 mA) BC846 BC847 BC848 V(BR)EBO 6.0 6.0 5.0 − − − − − − V Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO − − − − 15 5.0 nA mA ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC846B, BC847B BC847C, BC848C (IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B BC847C, BC848C hFE − − 200 420 150 270 290 520 − − 450 800 − Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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