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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF737LC 데이터시트(PDF) 2 Page - International Rectifier |
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IRF737LC 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF737LC Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 300 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.391 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.75 Ω VGS = 10V, ID = 3.7A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.7 ––– ––– S VDS = 50V, ID = 3.7A ––– ––– 25 VDS = 300V, VGS = 0V ––– ––– 250 VDS = 240V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 17 ID = 6.1A Qgs Gate-to-Source Charge ––– ––– 4.8 nC VDS = 240V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 7.6 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 6.6 ––– VDD = 150V tr Rise Time ––– 21 ––– ID = 6.1A td(off) Turn-Off Delay Time ––– 13 ––– RG = 12Ω tf Fall Time ––– 12 ––– RD = 24Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 430 ––– VGS = 0V Coss Output Capacitance ––– 120 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 9.2 ––– ƒ = 1.0MHz, See Fig. 5 nH µA nA IDSS Drain-to-Source Leakage Current IGSS LS Internal Source Inductance ––– ––– ns 4.5 7.5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ––– LD Internal Drain Inductance ––– ––– ––– Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.6 V TJ = 25°C, IS = 6.1A, VGS = 0V trr Reverse Recovery Time ––– 320 490 ns TJ = 25°C, IF = 6.1A Qrr Reverse RecoveryCharge ––– 1.5 2.2 µC di/dt = 100A/µs Source-Drain Ratings and Characteristics A ––– ––– 24 ––– ––– 6.1 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 6.1A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. VDD = 25V, starting TJ = 25°C, L = 5.7mH RG = 25Ω, IAS = 6.1A. (See Figure 12) |
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