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TIPL760C 데이터시트(PDF) 1 Page - Bourns Electronic Solutions |
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TIPL760C 데이터시트(HTML) 1 Page - Bourns Electronic Solutions |
1 / 5 page TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS P R O D UCT INFORMA TION 1 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1200 Volt Blocking Capability ● 75 W at 25°C Case Temperature absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) TIPL760B TIPL760C VCBO 1100 1200 V Collector-emitter voltage (VBE = 0) TIPL760B TIPL760C VCES 1100 1200 V Collector-emitter voltage (IB = 0) TIPL760B TIPL760C VCEO 500 550 V Emitter-base voltage VEBO 10 V Continuous collector current IC 4A Peak collector current (see Note 1) ICM 8A Continuous device dissipation at (or below) 25°C case temperature Ptot 75 W Operating junction temperature range Tj -65 to +150 °C Storage temperature range Tstg -65 to +150 °C B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 |
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