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BC847BTT1G 데이터시트(PDF) 1 Page - ON Semiconductor |
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BC847BTT1G 데이터시트(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 3 1 Publication Order Number: BC847ATT1/D BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which is designed for low power surface mount applications. Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • Pb−Free Packages are Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 45 V Collector−Base Voltage VCBO 50 V Emitter−Base Voltage VEBO 6.0 V Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25 °C PD 200 1.6 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 600 °C/W Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 400 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C 1. FR−4 @ min pad. 2. FR−4 @ 1.0 × 1.0 in pad. CASE 463 SC−75/SOT−416 STYLE 1 MARKING DIAGRAM 3 2 1 COLLECTOR 3 1 BASE 2 EMITTER http://onsemi.com XXM G G XX = Device Code M = Date Code G = Pb−Free Package See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION (Note: Microdot may be in either location) |
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