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SMBT3904DW1 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 SMBT3904DW1
상세설명  Dual General Purpose Transistors
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SMBT3904DW1 데이터시트(HTML) 2 Page - ON Semiconductor

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MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
Collector − Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
50
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
40
70
100
60
30
300
Collector − Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.2
0.3
Vdc
Base − Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
0.65
0.85
0.95
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
300
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
8.0
pF
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hie
1.0
2.0
10
12
k
W
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
0.5
0.1
8.0
10
X 10−4
Small − Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
100
100
400
400
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
1.0
3.0
40
60
mmhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
NF
5.0
dB
2. Pulse Test: Pulse Width
≤ 300 ms; Duty Cycle ≤ 2.0%.


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