BC846BM3T5G_14 datasheet(3/5 Pages) ONSEMI

부품명	BC846BM3T5G

상세설명	General Purpose Transistor

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BC846BM3T5G, NSVBC846BM3T5G

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TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

Figure 2. Collector−Emitter Saturation Voltage

IC, COLLECTOR CURRENT (mA)

1,000

100

10

1

0.1

10

100

1,000

100

10

1

0.1

0

0.1

0.2

0.3

0.4

Figure 3. Base−Emitter Saturation Voltage

Figure 4. Base−Emitter “On” Voltage

IC, COLLECTOR CURRENT (mA)

1,000

100

10

1

0.1

0

0.2

0.4

0.6

0.8

1.0

1.2

1,000

100

10

1

0.1

0

0.4

0.2

0.8

1.0

1.2

Figure 5. Base−Emitter Temperature

Coefficient

Figure 6. Collector Saturation Region

IC, COLLECTOR CURRENT (mA)

IB, BASE CURRENT (mA)

1,000

100

10

1

0.1

−3.0

−2.6

−2.2

−1.8

−1.4

−1.0

−0.6

−0.2

100

10

1

0.1

0.01

0

0.4

0.8

1.2

1.6

2.0

VCE = 5 V

150°C

25°C

−55°C

150°C

25°C

−55°C

IC/IB = 20

150°C

25°C

−55°C

0.6

VCE = 5 V

150°C

25°C

−55°C

VCE = 5 V

−55°C to 150°C

qVB, for VBE

TA = 25°C

IC = 200 mA

100 mA

50 mA

20 mA

10 mA

유사한 부품 번호 - BC846BM3T5G_14

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	BC846BM3T5G	108Kb / 5P	General Purpose Transistor NPN Silicon September, 2008 ??Rev. 1

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