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IRF6617 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF6617
상세설명  HEXFET Power MOSFET
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF6617 데이터시트(HTML) 1 Page - International Rectifier

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www.irf.com
1
3/12/04
IRF6617
HEXFET® Power MOSFET
Notes
 through ˆ are on page 2
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with Existing Surface Mount Techniques
Description
The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, IMPROVING previous best thermal resistance by 80%.
The IRF6617 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6617 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
DirectFET
™ ISOMETRIC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ
SX
ST
MQ
MX
MT
PD - 95847
VDSS
RDS(on) max
Qg(typ.)
30V
8.1m
Ω@V
GS = 10V
11nC
10.3m
Ω@V
GS = 4.5V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
™
PD @TA = 25°C
Power Dissipation
g
PD @TA = 70°C
Power Dissipation
g
W
PD @TC = 25°C
Power Dissipation
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
fj
–––
58
RθJA
Junction-to-Ambient
gj
12.5
–––
RθJA
Junction-to-Ambient
hj
20
–––
°C/W
RθJC
Junction-to-Case
ij
–––
3.0
RθJ-PCB
Junction-to-PCB Mounted
1.0
–––
-40 to + 150
2.1
0.017
1.4
42
27
12
Max.
14
11
120
±20
30
55


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