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BAR81WH6327 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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BAR81WH6327 데이터시트(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2011-06-14 1 BAR81... Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free (RoHS compliant) package BAR81W " ! Type Package Configuration LS(nH) Marking BAR81W SOT343 single shunt-diode 0.15* BBs * series inductance chip to ground Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward current IF 100 mA Total power dissipation Ts ≤ 138°C Ptot 100 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 120 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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