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KM29W040AT 데이터시트(PDF) 10 Page - Samsung semiconductor |
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KM29W040AT 데이터시트(HTML) 10 Page - Samsung semiconductor |
10 / 22 page KM29W040AT, KM29W040AIT FLASH MEMORY 10 Error in program or erase operation The device may fail during a program or erase operation. The following possible failure modes should be considered when implementing a highly reliable system. KM29W040A Technical Notes(Continued) Failure Mode Detection and Countermeasure sequence Block Erase Failure Read after Erase --> Block Replacement Frame Program Failure Status Read after Program --> Block Replacement Single Bit Program Failure ("1" --> "0") Block Verify after Program --> Block Replacement Block Replacement When the error happens in Block "A", try to reprogram the data into another Block "B" by reloading from an external buffer. Then, prevent further system access to Block "A"(by creating a "bad block" table or other appropriate scheme.) During Program operation ; During Erase operation ; When the error occurs after an erase operation, prevent future accesses to this bad block (again by creating a table within the system or other appropriate scheme.) Buffer memory error occurs Block A Block B |
유사한 부품 번호 - KM29W040AT |
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유사한 설명 - KM29W040AT |
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