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KM29W040AT 데이터시트(PDF) 10 Page - Samsung semiconductor

부품명 KM29W040AT
상세설명  512K x 8 bit NAND Flash Memory
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제조업체  SAMSUNG [Samsung semiconductor]
홈페이지  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM29W040AT 데이터시트(HTML) 10 Page - Samsung semiconductor

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KM29W040AT, KM29W040AIT
FLASH MEMORY
10
Error in program or erase operation
The device may fail during a program or erase operation.
The following possible failure modes should be considered when implementing a highly reliable system.
KM29W040A Technical Notes(Continued)
Failure Mode
Detection and Countermeasure sequence
Block
Erase Failure
Read after Erase --> Block Replacement
Frame
Program Failure
Status Read after Program --> Block Replacement
Single Bit
Program Failure
("1" --> "0")
Block Verify after Program --> Block Replacement
Block Replacement
When the error happens in Block "A", try to reprogram the
data into another Block "B" by reloading from an external
buffer. Then, prevent further system access to Block
"A"(by creating a "bad block" table or other appropriate
scheme.)
During Program operation ;
During Erase operation ;
When the error occurs after an erase operation, prevent future accesses to this bad block
(again by creating a table within the system or other appropriate scheme.)
Buffer
memory
error occurs
Block A
Block B


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