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SQJQ410EL 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SQJQ410EL
부품 상세설명  Automotive N-Channel 100 V (D-S) 175 °C MOSFET
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SQJQ410EL 데이터시트(HTML) 2 Page - Vishay Siliconix

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SQJQ410EL
www.vishay.com
Vishay Siliconix
S16-1124-Rev. A, 13-Jun-16
2
Document Number: 76643
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width
 300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 250 μA
100
-
-
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2
2.5
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 100 V
-
-
1
μA
VGS = 0 V
VDS = 100 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 100 V, TJ = 175 °C
-
-
500
On-State Drain Current a
ID(on)
VGS = 10 V
VDS  5 V
50
-
-
A
Drain-Source On-State Resistance a
RDS(on)
VGS = 10 V
ID = 20 A
-
0.0028
0.0034
VGS = 4.5 V
ID = 10 A
-
0.0033
0.0040
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.0058
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.0074
Forward Transconductance b
gfs
VDS = 15 V, ID = 15 A
-
84
-
S
Dynamic b
Input Capacitance
Ciss
VGS = 0 V
VDS = 25 V, f = 1 MHz
-
5620
7350
pF
Output Capacitance
Coss
-
2850
3750
Reverse Transfer Capacitance
Crss
-
220
290
Total Gate Charge c
Qg
VGS = 10 V
VDS = 50 V, ID = 10 A
-
97
150
nC
Gate-Source Charge c
Qgs
-15
-
Gate-Drain Charge c
Qgd
-20
-
Gate Resistance
Rg
f = 1 MHz
0.95
1.92
3
Turn-On Delay Time c
td(on)
VDD = 50 V, RL = 5 
ID  10 A, VGEN = 10 V, Rg = 1 
-19
30
ns
Rise Time c
tr
-40
60
Turn-Off Delay Time c
td(off)
-
69
110
Fall Time c
tf
-
87
135
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
-
-
210
A
Forward Voltage
VSD
IF = 40 A, VGS = 0 V
-
0.83
1.2
V


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