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SQJQ410EL 데이터시트(PDF) 4 Page - Vishay Siliconix

부품명 SQJQ410EL
부품 상세설명  Automotive N-Channel 100 V (D-S) 175 °C MOSFET
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SQJQ410EL 데이터시트(HTML) 4 Page - Vishay Siliconix

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SQJQ410EL
www.vishay.com
Vishay Siliconix
S16-1124-Rev. A, 13-Jun-16
4
Document Number: 76643
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
Drain Source Breakdown vs. Junction Temperature
Threshold Voltage
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Safe Operating Area
10
100
1000
10000
0.5
0.9
1.3
1.7
2.1
2.5
-50 -25
0
255075
100 125 150 175
Axis Title
T
J - Junction Temperature (°C)
2nd line
I
D = 10 A
V
GS = 10 V
V
GS = 4.5 V
10
100
1000
10000
105
109
113
117
121
125
-50 -25
0
25
50
75
100 125 150 175
Axis Title
T
J - Junction Temperature (°C)
2nd line
I
D = 1 mA
10
100
1000
10000
-1.5
-1.1
-0.7
-0.3
0.1
0.5
-50 -25
0
25
50
75
100 125 150 175
Axis Title
T
J - Temperature (°C)
2nd line
I
D = 5 mA
I
D = 250 μA
10
100
1000
10000
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Axis Title
V
SD - Source-to-Drain Voltage (V)
2nd line
T
J = 150 °C
T
J = 25 °C
10
100
1000
10000
0.000
0.004
0.008
0.012
0.016
0.020
02468
10
Axis Title
V
GS - Gate-to-Source Voltage (V)
2nd line
T
J = 25 °C
T
J = 150 °C
10
100
1000
10000
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
Axis Title
V
DS - Drain-to-Source Voltage (V)
(1) V
GS > minimum VGS at which RDS(on) is specified
I
DM limited
Limited by R
DS(on)
(1)
T
C = 25 °C
Single pulse
BVDSS limited
100 ms, 1 s, 10 s, DC
10 ms
1 ms
100 μs


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