BCP69T1G datasheet(3/4 Pages) ONSEMI

부품명	BCP69T1G

상세설명	PNP Silicon Epitaxial Transistor

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BCP69T1G, NSVBCP69T1G

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TYPICAL ELECTRICAL CHARACTERISTICS

Figure 3. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0

0.05

0.15

0.25

0.35

IC/IB = 10

150°C

25°C

−55°C

0.10

0.20

0.30

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0.2

0.6

1.0

1.4

IC/IB = 10

150°C

25°C

−55°C

0.4

0.8

1.2

Figure 5. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

10

1

0.1

0.01

0.001

0.2

0.3

0.5

0.9

1.2

VCE = 1 V

150°C

25°C

−55°C

0.4

0.8

1.0

0.6

0.7

1.1

160

0

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitances

120

80

40

Cob

Cib

-5.0

-1.0

-2.0

-4.0

-2.5

-5.0

Cib

Cob

TJ = 25°C

-1.0

-2.0

-1.5

-3.0

VCE, COLLECTOR-EMITTER VOLTAGE (V)

Figure 7. Safe Operating Area

0.01

10

1.0

0.1

1.0

100

0.1

10

10 ms

Single Pulse Test

@ TA = 25°C

Thermal Limit

100 ms

1 ms

1 s

유사한 부품 번호 - BCP69T1G

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	BCP69T1G	101Kb / 4P	PNP Silicon Epitaxial Transistor October, 2008 ??Rev. 8

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유사한 설명 - BCP69T1G

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BCP69T1G 데이터시트(PDF) 3 Page - ON Semiconductor

BCP69T1G 데이터시트(HTML) 3 Page - ON Semiconductor

유사한 부품 번호 - BCP69T1G

유사한 설명 - BCP69T1G

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