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TC55VCM216ASTN40 데이터시트(HTML) 1 Page - Toshiba Semiconductor

부품명 TC55VCM216ASTN40
상세내용  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC55VCM216ASTN40 데이터시트(HTML) 1 Page - Toshiba Semiconductor

 
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TC55VCM216ASTN40,55
2002-07-04
1/14
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
DESCRIPTION
The TC55VCM216ASTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by
16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to
3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of
3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in low-power mode at 0.7 µA standby
current (at VDD = 3 V, Ta = 25°C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There
are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output
enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access.
This device is well suited to various microprocessor system applications where high speed, low power and battery
backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the
TC55VCM216ASTN can be used in environments exhibiting extreme temperature conditions. The
TC55VCM216ASTN is available in a plastic 48-pin thin-small-outline package (TSOP).
FEATURES
• Low-power dissipation
Operating: 9 mW/MHz (typical)
• Single power supply voltage of 2.3 to 3.6 V
• Power down features using CE1 and CE2
• Data retention supply voltage of 1.5 to 3.6 V
• Direct TTL compatibility for all inputs and outputs
• Wide operating temperature range of −40° to 85°C
• Standby Current (maximum):
3.6 V
10
µA
3.0 V
5
µA
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
48 PIN TSOP
A0~A17
Address Inputs
1
CE
, CE2
Chip Enable
R/W
Read/Write Control
OE
Output Enable
LB , UB
Data Byte Control
I/O1~I/O16
Data Inputs/Outputs
VDD
Power
GND
Ground
NC
No Connection
OP*
Option
*: OP pin must be open or connected to GND.
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
R/W
CE2
OP
UB
LB
NC
Pin No.
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
Pin Name
A17
A7
A6
A5
A4
A3
A2
A1
A0
1
CE
GND
OE
I/O1
I/O9
I/O2
I/O10
Pin No.
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Pin Name
I/O3
I/O11
I/O4
I/O12
VDD
I/O5
I/O13
I/O6
I/O14
I/O7
I/O15
I/O8
I/O16 GND
NC
A16
• Access Times (maximum):
TC55VCM216ASTN
40
55
Access Time
40 ns
55 ns
1
CE
Access Time
40 ns
55 ns
CE2
Access Time
40 ns
55 ns
OE
Access Time
25 ns
30 ns
• Package:
TSOPⅠ48-P-1214-0.50
(Weight:0.35 g typ)
(Normal)
25
48
24
1


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