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TC55VCM216ASTN40 데이터시트(HTML) 11 Page - Toshiba Semiconductor

부품명 TC55VCM216ASTN40
상세내용  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC55VCM216ASTN40 데이터시트(HTML) 11 Page - Toshiba Semiconductor

 
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TC55VCM216ASTN40,55
2002-07-04
11/14
DATA RETENTION CHARACTERISTICS (Ta
==== −−−−40° to 85°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDH
Data Retention Supply Voltage
1.5
3.6
V
VDH = 3.6 V Ta = −40~85°C
10
Ta
= −40~40°C
2
IDDS2
Standby Current
VDH = 3.0 V
Ta
= −40~85°C
5
µA
tCDR
Chip Deselect to Data Retention Mode Time
0
ns
tR
Recovery Time
5
ms
CONTROLLED DATA RETENTION MODE
(See Note 1)
CE2 CONTROLLED DATA RETENTION MODE
(See Note 3)
,
CONTROLLED DATA RETENTION MODE
(See Note 4)
VDD
2.3 V
GND
VIL
DATA RETENTION MODE
tR
tCDR
VDD
0.2 V
VIH
CE2
CE1
VDD
2.3 V
GND
VIH
DATA RETENTION MODE
tR
(See Note 2)
(See Note 2)
tCDR
VDD
VDD − 0.2 V
1
CE
UB LB
VDD
2.3 V
GND
VIH
DATA RETENTION MODE
tR
(See Note 5)
(See Note 5)
tCDR
VDD
VDD − 0.2 V
UB
, LB


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