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IRFPS40N60K 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFPS40N60K 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91261 www.vishay.com S11-0112-Rev. B, 31-Jan-11 1 Power MOSFET IRFPS40N60K, SiHFPS40N60K Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Enhanced Body Diode dV/dt Capability • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Hard Switching Primary or PFC Switch • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • Motor Drive Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 0.84 mH, Rg = 25 , IAS = 38 A, dV/dt = 5.5 V/ns (see fig. 12a). c. ISD 38 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) ()VGS = 10 V 0.110 Qg (Max.) (nC) 330 Qgs (nC) 84 Qgd (nC) 150 Configuration Single N-Channel MOSFET G D S G D S Super-247 Available RoHS* COMPLIANT ORDERING INFORMATION Package Super-247 Lead (Pb)-free IRFPS40N60KPbF SiHFPS40N60K-E3 SnPb IRFPS40N60K SiHFPS40N60K ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 40 A TC = 100 °C 24 Pulsed Drain Currenta IDM 160 Linear Derating Factor 4.5 W/°C Single Pulse Avalanche Energyb EAS 600 mJ Repetitive Avalanche Currenta IAR 40 A Repetitive Avalanche Energya EAR 57 mJ Maximum Power Dissipation TC = 25 °C PD 570 W Peak Diode Recovery dV/dtc dV/dt 7.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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