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IRFPS40N60K 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRFPS40N60K 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91261 2 S11-0112-Rev. B, 31-Jan-11 IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.22 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 50 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 24 Ab - 0.110 0.130 Forward Transconductance gfs VDS = 50 V, ID = 24 Ab 21 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 7970 - pF Output Capacitance Coss - 750 - Reverse Transfer Capacitance Crss -75 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V , f = 1.0 MHz - 9440 - VDS = 480 V , f = 1.0 MHz - 200 - Effective Output Capacitance Coss eff. VDS = 0 V to 480 Vc - 260 - Total Gate Charge Qg VGS = 10 V ID = 38 A, VDS = 480 V, see fig. 6 and 13b - - 330 nC Gate-Source Charge Qgs -- 84 Gate-Drain Charge Qgd - - 150 Turn-On Delay Time td(on) VDD = 300 V, ID = 38 A, RG = 4.3 , see fig. 10b -47 - ns Rise Time tr - 110 - Turn-Off Delay Time td(off) -97 - Fall Time tf -60 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 40 A Pulsed Diode Forward Currenta ISM - - 160 Body Diode Voltage VSD TJ = 25 °C, IS = 38 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C IF = 38 A, dI/dt = 100 A/μs - 630 950 ns TJ = 125 °C - 730 1090 Body Diode Reverse Recovery Charge Qrr TJ = 25 °C - 14 20 μC TJ = 125 °C - 17 25 Body Diode Recovery Current IRRM TJ = 25 °C - 39 58 A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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