전자부품 데이터시트 검색엔진 |
|
2SC1623W 데이터시트(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
|
2SC1623W 데이터시트(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification NPN Silicon Epitaxial Planar Transistor 2SC1623W F035 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=6V,IC=1mA 90 200 600 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.15 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 0.86 1.0 V Transition frequency fT VCE=6V, IE= -10mA 250 MHz Output capacitance Cob VCE=6V, IE= 0mA f=1.0MHz 3.0 pF CLASSIFICANTION OF hFE Marking L4 L5 L6 L7 hFE 90-180 135-270 200-400 300-600 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
유사한 부품 번호 - 2SC1623W_14 |
|
유사한 설명 - 2SC1623W_14 |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |