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IRFPS38N60L 데이터시트(PDF) 1 Page - Vishay Siliconix |
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IRFPS38N60L 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91259 www.vishay.com S11-0111-Rev. B, 07-Feb-11 1 Power MOSFET IRFPS38N60L, SiHFPS38N60L Vishay Siliconix FEATURES • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simple Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uniterruptible Power Supplies • Motor Control applications Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Starting TJ = 25 °C, L = 0.91 mH, Rg = 25 , IAS = 38 A, dV/dt = 13 V/ns (see fig. 14a). c. ISD 38 A, dI/dt 630 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) ()VGS = 10 V 0.12 Qg (Max.) (nC) 320 Qgs (nC) 85 Qgd (nC) 160 Configuration Single N-Channel MOSFET G D S Super-247 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package Super-247 Lead (Pb)-free IRFPS38N60LPbF SiHFPS38N60L-E3 SnPb IRFPS38N60L SiHFPS38N60L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 38 A TC = 100 °C 24 Pulsed Drain Currenta IDM 150 Linear Derating Factor 4.3 W/°C Single Pulse Avalanche Energyb EAS 680 mJ Repetitive Avalanche Currenta IAR 38 A Repetitive Avalanche Energya EAR 54 mJ Maximum Power Dissipation TC = 25 °C PD 540 W Peak Diode Recovery dV/dtc dV/dt 19 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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