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IRFPS38N60L 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRFPS38N60L 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91259 2 S11-0111-Rev. B, 07-Feb-11 IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Pulse width 300 μs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 % to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.22 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 410 - mV/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 50 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 23 Ab - 0.12 0.15 Forward Transconductance gfs VDS = 50 V, ID = 23 Ab 20 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 7990 - pF Output Capacitance Coss - 740 - Reverse Transfer Capacitance Crss -72 - Effective Output Capacitance Coss eff. VGS = 0 V VDS = 0 V to 480 Vc - 350 - Effective Output Capacitance (Energy Related) Coss eff. (ER) - 260 - Total Gate Charge Qg VGS = 10 V ID = 38 A, VDS = 480 V see fig. 7 and 15b - - 320 nC Gate-Source Charge Qgs -- 85 Gate-Drain Charge Qgd - - 160 Gate Resistance RG f = 1 MHz, open drain - 1.2 - Turn-On Delay Time td(on) VDD = 300 V, ID = 38 A, RG = 4.3 , VGS = 10 V, see fig. 11a and 11bb -44 - ns Rise Time tr - 130 - Turn-Off Delay Time td(off) -92 - Fall Time tf -69 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 38 A Pulsed Diode Forward Currenta ISM - - 150 Body Diode Voltage VSD TJ = 25 °C, IS = 38 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 38 A - 170 250 ns TJ = 125 °C, dI/dt = 100 A/μsb - 420 630 Body Diode Reverse Recovery Charge Qrr TJ = 25 °C, IF = 38 A, VGS = 0 Vb - 830 1240 nC TJ = 125 °C, dI/dt = 100 A/μsb - 2600 3900 Reverse Recovery Time IRRM TJ = 25 °C - 9.1 14 A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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