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SI2334DS 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI2334DS
상세설명  N-Channel 30 V (D-S) MOSFET
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제조업체  VISHAY [Vishay Siliconix]
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Document Number: 66802
S10-1533-Rev. A, 19-Jul-10
Vishay Siliconix
Si2334DS
New Product
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
2.8
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 0.2
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
0.4
1.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
10
A
Drain-Source On-State Resistancea
RDS(on)
VGS 4.5 V, ID = 4.2 A
0.035
0.044
VGS 2.5 V, ID = 4.0 A
0.040
0.050
Forward Transconductancea
gfs
VDS = 15 V, ID = 4.2 A
27
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
634
pF
Output Capacitance
Coss
65
Reverse Transfer Capacitance
Crss
30
Total Gate Charge
Qg
VDS = 15 V, VGS = 4.5 V, ID = 4.2 A
6.5
10
nC
VDS = 15 V, VGS = 2.5 V, ID = 4.2 A
3.7
6
Gate-Source Charge
Qgs
1.2
Gate-Drain Charge
Qgd
0.8
Gate Resistance
Rg
f = 1 MHz
0.5
2.7
5.4
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 4.4 
ID  3.4 A, VGEN = 4.5 V, Rg = 1 
612
ns
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
16
24
Fall Time
tf
816
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 4.4 
ID  3.4 A, VGEN = 8 V, Rg = 1 
48
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
18
27
Fall Time
tf
816
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
1.4
A
Pulse Diode Forward Current
ISM
10
Body Diode Voltage
VSD
IS = 3.4 A, VGS 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 3.4 A, dI/dt = 100 A/µs, TJ = 25 °C
11
20
ns
Body Diode Reverse Recovery Charge
Qrr
510
nC
Reverse Recovery Fall Time
ta
7
ns
Reverse Recovery Rise Time
tb
4


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