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SI4491EDY 데이터시트(PDF) 5 Page - Vishay Siliconix |
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SI4491EDY 데이터시트(HTML) 5 Page - Vishay Siliconix |
5 / 9 page Document Number: 63866 S12-2337-Rev. B, 01-Oct-12 www.vishay.com 5 Vishay Siliconix Si4491EDY New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Safe Operating Area, Junction-to-Ambient Power Junction-to-Foot 0.001 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms T A = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s DC, 10 s 0 2.2 4.4 6.6 8.8 0 25 50 75 100 125 150 T C - Case Temperature (°C) Current Derating* Power Junction-to-Ambient 0 6 12 18 24 30 0 25 50 75 100 125 150 T C - Case Temperature (°C) 0.0 0.5 0.9 1.4 1.8 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) |
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