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SI4890BDY 데이터시트(PDF) 1 Page - Vishay Siliconix |
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1 / 7 page Vishay Siliconix Si4890BDY Document Number: 69502 S09-0540-Rev. B, 06-Apr-09 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Notebook - System Power - Adapter Switch • DC/DC PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) 30 0.012 at VGS = 10 V 16 10 nC 0.016 at VGS = 4.5 V 14 SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4890BDY-T1-E3 (Lead (Pb)-free) Si4890BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 90 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 25 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 16 A TC = 70 °C 12.9 TA = 25 °C 10.7b, c TA = 70 °C 8.6b, c Pulsed Drain Current IDM 60 Continuous Source-Drain Diode Current TC = 25 °C IS 5.1 TA = 25 °C 2.2b, c Single Pulse Avalanche Current L = 0.1 mH IAS 20 Avalanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD 5.7 W TC = 70 °C 3.6 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 40 50 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 |
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