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SI7302DN 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 SI7302DN
상세설명  N-Channel 220-V (D-S) MOSFET
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Document Number: 73306
S-83051-Rev. D, 29-Dec-08
Vishay Siliconix
Si7302DN
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
220
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
240
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
7.7
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
24
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = 20 VGS
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 220 V, VGS = 0 V
1
µA
VDS = 220 V, VGS = 0 V, TJ = 55 °C
10
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
10
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 2.3 A
0.260
0.320
Ω
VGS = 6 V, ID = 2.2 A
0.280
0.340
Forward Transconductancea
gfs
VDS = 15 V, ID = 2.3 A
11
S
Dynamicb
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, f = 1 MHz
645
pF
Output Capacitance
Coss
72
Reverse Transfer Capacitance
Crss
47
Total Gate Charge
Qg
VDS = 110 V, VGS = 10 V, ID = 2.3 A
14
21
VDS = 110 V, VGS = 6 V, ID = 2.3 A
9.1
14
nC
Gate-Source Charge
Qgs
2.8
Gate-Drain Charge
Qgd
4.2
Gate Resistance
Rg
VGS = 0.1 mV, f = 1 MHz
0.9
1.8
2.7
Ω
Turn-On Delay Time
td(on)
VDD = 110 V, RL = 110 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω
10
15
ns
Rise Time
tr
10
15
Turn-Off Delay Time
td(off)
20
30
Fall Time
tf
15
25
Drain-Source Body Diode Characteristics TC = 25 °C, unless otherwise noted
Continuous Source-Drain Diode Current
IS
8.4
A
Pulse Diode Forward Current
ISM
10
Body Diode Voltage
VSD
IS = 3.2 A, VGS = 0 V
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C
65
100
ns
Body Diode Reverse Recovery Charge
Qrr
163
250
nC
Reverse Recovery Fall Time
ta
45
ns
Reverse Recovery Rise Time
tb
20


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