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SI7328DN 데이터시트(PDF) 1 Page - Vishay Siliconix |
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1 / 12 page Vishay Siliconix Si7328DN New Product Document Number: 73960 S-81005-Rev. B, 05-May-08 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS • Synchronous Rectification • Notebook • DC/DC Converter PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) e Qg (Typ.) 30 0.0066 at VGS = 10 V 35 21 nC 0.0076 at VGS = 4.5 V 35 1 2 3 4 5 6 7 8 S S S G D D D D 3.30 mm 3.30 mm PowerPAK 1212-8 Bottom View Ordering Information: Si7328DN-T1-E3 (Lead (Pb)-free) Si7328DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 35e A TC = 70 °C 35e TA = 25 °C 18.9a, b TA = 70 °C 17.35a, b Pulsed Drain Current IDM 60 Continuous Source-Drain Diode Current TC = 25 °C IS 35e TA = 25 °C 3.15a, b Maximum Power Dissipation TC = 25 °C PD 52 W TC = 70 °C 43 TA = 25 °C 3.78a, b TA = 70 °C 3.18a, b Operating Junction and Storage Temperature Range TJ, Tstg - 50 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 RoHS COMPLIANT |
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