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IRFPS30N60K 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IRFPS30N60K 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91256 2 S09-0007-Rev. B, 19-Jan-09 IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Note a. Rth is measured at TJ approximately 90 °C. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambienta RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain)a RthJC -0.28 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 600 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mAd -0.66 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 50 µA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 18 Ab - 0.16 0.19 Ω Forward Transconductance gfs VDS = 50 V, ID = 18 A 16 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz - 5870 - pF Output Capacitance Coss - 530 - Reverse Transfer Capacitance Crss -54 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V , f = 1.0 MHz - 6920 - VDS = 480 V , f = 1.0 MHz - 140 - Effective Output Capacitance Coss eff. VDS = 0 V to 480 Vc - 270 - Total Gate Charge Qg VGS = 10 V ID = 30 A, VDS = 480 Vb - - 220 nC Gate-Source Charge Qgs -- 64 Gate-Drain Charge Qgd - - 110 Turn-On Delay Time td(on) VDD = 300 V, ID = 30 A, RG = 3.9 Ω, VGS = 10 Vb -29 - ns Rise Time tr - 120 - Turn-Off Delay Time td(off) -56 - Fall Time tf -50 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 30 A Pulsed Diode Forward Currenta ISM - - 120 Body Diode Voltage VSD TJ = 25 °C, IS = 30 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 30 A, dI/dt = 100 A/µsb - 640 960 ns Body Diode Reverse Recovery Charge Qrr -11 16 µC Body Diode Recovery Current IRRM -31 - A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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